Silicon-based semiconductor heterostructures: column IV bandgap engineering

Author

Bean, John C.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

80

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

571

Lastpage

587

Abstract

The use of strained layer epitaxy to grow high-quality Ge_xSi_1-x/Si heterostructures and their application to a wide range of heterostructure devices are addressed. The author reviews the mechanisms of strained layer growth, the bandstructure of the resulting material, and its use in test devices, including superlattice avalanche photodiodes for fiber optic communication, intrasubband optical detectors and arrays operating in the 10-15 μm wavelength range, mobility enhanced modulation-doped transistors, heterojunction bipolar transistors with cutoff frequencies of 75 GHz, and negative resistance devices based on resonant tunneling and real-space carrier transfer

Keywords

Ge-Si alloys; avalanche photodiodes; band structure of crystalline semiconductors and insulators; elemental semiconductors; heterojunction bipolar transistors; high electron mobility transistors; molecular beam epitaxial growth; negative resistance effects; photodetectors; resonant tunnelling devices; semiconductor materials; silicon; vapour phase epitaxial growth; 10 to 15 micron; Ge_xSi_1-x-Si; bandstructure; cutoff frequencies; fiber optic communication; heterojunction bipolar transistors; heterostructure devices; intrasubband optical detectors; modulation-doped transistors; negative resistance devices; real-space carrier transfer; resonant tunneling; strained layer epitaxy; superlattice avalanche photodiodes; Avalanche photodiodes; Epitaxial growth; Heterojunction bipolar transistors; Materials testing; Optical arrays; Optical fiber communication; Optical fiber testing; Optical materials; Photonic band gap; Superlattices;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.135380

Filename

135380