Author :
Hutson, J.M. ; Pellish, J.A. ; Tipton, A.D. ; Boselli, G. ; Xapsos, M.A. ; Kim, H. ; Friendlich, M. ; Campola, M. ; Seidleck, S. ; LaBel, K. ; Marshall, A. ; Deng, X. ; Baumann, R. ; Reed, R.A. ; Schrimpf, R.D. ; Weller, R.A. ; Massengill, L.W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN
Abstract :
Single event latchup (SEL) in a 65 nm CMOS SRAM technology due to heavy ions is observed and device sensitivity is shown to be a strong function of lateral beam orientation, angle of incidence, and temperature. Experimental results show the importance of testing at multiple lateral beam orientations to properly characterize device sensitivity.
Keywords :
CMOS memory circuits; SRAM chips; ion beam effects; CMOS SRAM technology; SEL; lateral angle effect; multiple lateral beam orientations; radiation effects; single-event latchup; size 65 nm; Anodes; Azimuthal angle; CMOS technology; Cathodes; Electrostatic discharge; Radiation effects; Random access memory; Substrates; Temperature sensors; Testing; 65 nm; azimuthal angle; grazing angle; lateral angle; radiation effects; single event latchup;
