Title :
A 2-V 23-μA 5.3-ppm/°C curvature-compensated CMOS bandgap voltage reference
Author :
Leung, Ka Nang ; Mok, Philip K T ; Leung, Chi Yat
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
fDate :
3/1/2003 12:00:00 AM
Abstract :
A high-order curvature-compensated CMOS bandgap reference, which utilizes a temperature-dependent resistor ratio generated by a high-resistive poly resistor and a diffusion resistor, is presented in this paper. Implemented in a standard 0.6-μm CMOS technology with Vthn≈|Vthp|≈0.9 V at 0°C, the proposed voltage reference can operate down to a 2-V supply and consumes a maximum supply current of 23 μA. A temperature coefficient of 5.3 ppm/°C at a 2-V supply and a line regulation of ±1.43 mV/V at 27°C are achieved. Experimental results show that the temperature drift is reduced by approximately five times when compared with a conventional bandgap reference in the same technology.
Keywords :
CMOS integrated circuits; compensation; low-power electronics; reference circuits; 0.6 micron; 2 V; 23 muA; 27 degC; CMOS; bandgap voltage reference; curvature-compensated reference; diffusion resistor; high-resistive poly resistor; line regulation; low-voltage applications; temperature coefficient; temperature-dependent resistor ratio; CMOS technology; Circuits; Current supplies; Mirrors; Photonic band gap; Piecewise linear techniques; Resistors; Temperature dependence; Thin film transistors; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2002.808328