Title :
LET Dependence of Single Event Transient Pulse-Widths in SOI Logic Cell
Author :
Makino, Takahiro ; Kobayashi, Daisuke ; Hirose, Kazuyuki ; Yanagawa, Yoshimitsu ; Saito, Hirobumi ; Ikeda, Hirokazu ; Takahashi, Daisuke ; Ishii, Shigeru ; Kusano, Masaki ; Onoda, Shinobu ; Hirao, Toshio ; Ohshima, Takeshi
Author_Institution :
Dept. of Space & Astronaut. Sci., Grad. Univ. for Adv. Studies, Sagamihara
Abstract :
Single event transient (SET) pulse-widths were measured as a function of linear energy transfer (LET) by using pulse capture circuits and simulated with mixed-mode 3-D device simulations. We found that the carrier recombination process dominates the LET dependence of the pulse-widths.
Keywords :
VLSI; electron-hole recombination; integrated circuit modelling; semiconductor device models; silicon-on-insulator; LET; SET; SOI logic cell; Si; carrier recombination process; linear energy transfer; logic VLSI; mixed-mode 3D device simulations; pulse capture circuits; single event transient pulse-widths; Circuit simulation; Circuit testing; Energy exchange; Extraterrestrial measurements; Logic; Pulse circuits; Pulse inverters; Pulse measurements; Pulse width modulation inverters; Space vector pulse width modulation; Logic cell; SOI; single event transient;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2009054
