Title :
Polycrystalline silicon films and thin-film transistors using solution-based metal-induced crystallization
Author :
Meng, Zhiguo ; Zhao, Shuyun ; Wu, Chunya ; Zhang, Bo ; Wong, Man ; Kwok, Hoi-Sing
Abstract :
Polycrystalline silicon (poly-Si) films consisting of dish-like and wadding-like domains were obtained with solution-based metal-induced crystallization (SMIC) of amorphous silicon. The Hall mobility of poly-Si was much higher in dish-like domains than in wadding-like domains. Thin-film transistors (TFTs) have been prepared using those two kinds of poly-Si films as the active layer, followed by the phosphosilicate glass (PSG) nickel gettering. The field effect mobility of dish-like domain poly-Si TFTs and wadding-like poly-Si TFTs were 70~80 cm2/Vmiddots and 40~50 cm2/Vmiddots, respectively. With a multi-gate structure, the leakage current of poly-Si TFTs was reduced by 1 to 2 orders of magnitude. In addition, the gate-induced drain leakage current (GIDL) and uniformity of the drain current distribution were also improved. P-type TFTs fabricated using SMIC exhibited excellent reliability
Keywords :
Hall mobility; amorphous semiconductors; crystallisation; current distribution; getters; leakage currents; semiconductor thin films; silicon; thin film transistors; Hall mobility; Si; amorphous silicon; dish-like domains; drain current distribution; field effect mobility; gate-induced drain leakage current; multigate structure; phosphosilicate glass nickel gettering; poly-Si films; polycrystalline silicon films; solution-based metal-induced crystallization; thin-film transistors; wadding-like domains; Amorphous silicon; Crystallization; Current distribution; Gettering; Glass; Hall effect; Leakage current; Nickel; Semiconductor films; Thin film transistors; Metal-induced crystallization (MIC); nickel gettering; polycrystalline silicon (poly-Si); thin-film transistors (TFTs);
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2006.878769
