Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealing

Author

Sadwick, Larry P. ; Streit, Dwight C. ; Jones, William L. ; Kim, C.W. ; Hwu, R. Jennifer

Author_Institution

Dept. of Electr. Eng., Utah Univ., Lake City, UT, USA

Volume

39

Issue

1

fYear

1992

fDate

1/1/1992 12:00:00 AM

Firstpage

50

Lastpage

55

Abstract

The device-related effects of rapid thermal annealing (RTA) on the electrical and optical properties of planar-doped AlGaAs/InGaAs/GaAs high-electron-mobility transistor structures grown by molecular beam epitaxy were investigated. Specifically, electrical and optical characterization techniques such as capacitance versus voltage, current versus voltage, Hall effect, and photoluminescence have been applied to study the effects that typical III-V compound semiconductor rapid thermal processes (RTPs) have on the properties of pseudomorphic AlGaAs/InGaAs/GaAs structures for two different values of In mole fraction content. The effect and stability of the indium mole fraction on both heterostructure and device integrity with respect to RTA schedule has been investigated in detail

Keywords

Hall effect; III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; incoherent light annealing; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor device testing; AlGaAs-InGaAs-GaAs; C-V characteristics; Hall effect; I-V characteristics; In mole fraction content; device integrity; electrical properties; optical properties; photoluminescence; pseudomorphic HEMT structures; rapid thermal annealing; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Material properties; Molecular beam epitaxial growth; Optical devices; PHEMTs; Rapid thermal annealing; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.108211

Filename

108211