DocumentCode
1157305
Title
High-speed digital family using field effect diode
Author
Sheikhian, I. ; Raissi, E.
Author_Institution
Electr. Eng. Dept., K.N. Toosi Univ. of Technol., Tehran, Iran
Volume
39
Issue
4
fYear
2003
fDate
2/20/2003 12:00:00 AM
Firstpage
345
Lastpage
347
Abstract
Novel high-speed digital subcircuits are proposed using field effect diodes (FED) as active elements. A SPICE simulation of the FED is presented and the characteristics of an inverter are examined. Using FED as the basis for a new digital family is discussed. Simulations show that such circuits are one to two orders of magnitude faster than conventional circuits.
Keywords
field effect devices; field effect digital integrated circuits; high-speed integrated circuits; logic gates; semiconductor device models; semiconductor diodes; FED inverter; FED-NAND structure; SPICE simulation; field effect diodes; high-speed digital subcircuits; inverter circuits;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030251
Filename
1184057
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