Title :
High power and high spectral brightness in 1060 nm α-DFB lasers with long resonators
Author :
Paschke, K. ; Güther, R. ; Fricke, J. ; Bugge, E. ; Erbert, G. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Forschungsverbund Berlin eV, Germany
fDate :
2/20/2003 12:00:00 AM
Abstract :
Angled-grating DFB lasers with long resonators were fabricated and characterised at 1060 nm. 4 mm-long laser diodes showed a CW-output power of 3 W with a times-diffraction-limit factor M2 = 3.2 and a spectral line width of 6 pm. A high spectral brightness of better than 1.2 × 104 MW/(cm2 sr nm) results.
Keywords :
III-V semiconductors; brightness; distributed feedback lasers; gallium arsenide; indium compounds; laser cavity resonators; laser modes; quantum well lasers; α-DFB lasers; 1060 nm; 3 W; 4 mm; CW light-current characteristics; CW output power; GaAs waveguide; InGaAs quantum well; InGaAs-GaAs; InGaAs/GaAs angled-grating DFB lasers; high power; high spectral brightness; long resonators; longitudinal monomode spectrum; spectral line width; times-diffraction-limit factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030225
