DocumentCode
1157486
Title
Passively modelocked vertical extended cavity surface emitting diode laser
Author
Jasim, K. ; Qiang Zhang ; Nurmikko, A.V. ; Mooradian, A. ; Carey, G. ; Wonill Ha ; Ippen, Erich
Author_Institution
Dept. of Phys., Brown Univ., Providence, RI, USA
Volume
39
Issue
4
fYear
2003
fDate
2/20/2003 12:00:00 AM
Firstpage
373
Lastpage
375
Abstract
Passive modelocking of a surface emitting diode laser is demonstrated using an extended cavity concept which permits the incorporation of a saturable Bragg reflector mirror into a device designed for large aperture operation as a high-power 980 nm InGaAs multiple quantum-well vertical cavity source.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; laser mode locking; optical pulse generation; quantum well lasers; surface emitting lasers; 980 nm; InGaAs-GaAsP; InGaAs/GaAsP MQWs; VECSEL; high-power InGaAs multiple quantum-well vertical cavity source; large aperture operation; modelocked pulse operation; passive modelocking; saturable Bragg reflector mirror; second-harmonic autocorrelation pulse width measurement; vertical extended cavity surface emitting diode laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030240
Filename
1184075
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