• DocumentCode
    1157493
  • Title

    5-6.5 GHz LTCC power amplifier module with 0.3 W at 2.4 V in Si-bipolar

  • Author

    Bakalski, W. ; Matz, R. ; Simburger, Werner ; Weger, P. ; Scholtz, Arpad L.

  • Author_Institution
    Inst. of Commun. & Radio-Frequency Eng., Vienna Univ. of Technol., Austria
  • Volume
    39
  • Issue
    4
  • fYear
    2003
  • fDate
    2/20/2003 12:00:00 AM
  • Firstpage
    375
  • Lastpage
    376
  • Abstract
    A fully integrated 5.5 × 8.1 mm2 low temperature cofired ceramic (LTCC) power amplifier module for 5-6.5 GHz has been realised in a 40 GHz-fT-BiCMOS technology. No external components are required. At 1 to 2.4 V supply voltages output powers of 17.5 to 24.8 dBm are achieved at 5.9 GHz. The respective power added efficiency is 28 to 36%. The small-signal gain is 23 dB.
  • Keywords
    BiCMOS analogue integrated circuits; integrated circuit measurement; microwave power amplifiers; 0.3 W; 1 to 2.4 V; 23 dB; 28 to 36 percent; 5 to 6.5 GHz; 60 GHz; BiCMOS technology; LTCC power amplifier module; fully integrated low temperature cofired ceramic power amplifier module; monolithic integrated two-stage push-pull type radio frequency power amplifier; output powers; power efficiency; small-signal gain; supply voltages;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030249
  • Filename
    1184076
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1157493