DocumentCode
1157542
Title
320 Gbit/s optical gate monolithically integrating photodiode and electroabsorption modulator
Author
Kodama, S. ; Yoshimatsu, T. ; Ito, H.
Author_Institution
NTT Photonics Labs., Kanagawa, Japan
Volume
39
Issue
4
fYear
2003
fDate
2/20/2003 12:00:00 AM
Firstpage
383
Lastpage
385
Abstract
The ultrafast demultiplexing operation of a monolithic optical gate that integrates a photodiode and an electroabsorption modulator has been investigated and successfully demonstrated at a data rate corresponding to 320 Gbit/s. The on/off ratio is 11 dB or better for adjacent channels and is higher than 16 dB for the others.
Keywords
demultiplexing; electro-optical modulation; electroabsorption; high-speed optical techniques; integrated optics; optical communication equipment; photodiodes; 320 Gbit/s; electroabsorption modulator; monolithic integration; on/off ratio; optical gate; photodiode; ultrafast demultiplexing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030242
Filename
1184082
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