DocumentCode :
1157542
Title :
320 Gbit/s optical gate monolithically integrating photodiode and electroabsorption modulator
Author :
Kodama, S. ; Yoshimatsu, T. ; Ito, H.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
Volume :
39
Issue :
4
fYear :
2003
fDate :
2/20/2003 12:00:00 AM
Firstpage :
383
Lastpage :
385
Abstract :
The ultrafast demultiplexing operation of a monolithic optical gate that integrates a photodiode and an electroabsorption modulator has been investigated and successfully demonstrated at a data rate corresponding to 320 Gbit/s. The on/off ratio is 11 dB or better for adjacent channels and is higher than 16 dB for the others.
Keywords :
demultiplexing; electro-optical modulation; electroabsorption; high-speed optical techniques; integrated optics; optical communication equipment; photodiodes; 320 Gbit/s; electroabsorption modulator; monolithic integration; on/off ratio; optical gate; photodiode; ultrafast demultiplexing;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20030242
Filename :
1184082
Link To Document :
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