Title :
Monolithically integrated avalanche photodiode and transimpedance amplifier in a hybrid bulk/SOI CMOS process
Author :
Moloney, A.M. ; Morrison, A.P. ; Jackson, J.C. ; Mathewson, A. ; Alderman, J. ; Donnelly, J. ; O´Neill, B. ; Kelleher, A.M. ; Healy, G. ; Murphy, P.J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. Coll. Cork, Ireland
fDate :
2/20/2003 12:00:00 AM
Abstract :
A novel monolithically integrated silicon-on-insulator (SOI) CMOS avalanche photodiode photoreceiver is presented. The photoreceiver consists of a high gain (>30), low voltage (<20 V) Geiger-mode avalanche photodiode, operated below breakdown in avalanche mode, monolithically integrated with a transimpedance amplifier (TZ) in a 1.5 μm hybrid bulk/SOI CMOS process.
Keywords :
CMOS integrated circuits; low-power electronics; optical fibre communication; optical interconnections; optical receivers; silicon-on-insulator; 0 to 20 V; 1.5 micron; Geiger-mode avalanche photodiode; Si; hybrid bulk/SOI CMOS process; low voltage device; optical interconnects; photoreceiver; short-haul plastic optical fibre communication systems; transimpedance amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030187
