• DocumentCode
    1157671
  • Title

    Characteristics of small-signal capacitances of silicon-on-sapphire MOSFETs

  • Author

    Kong, F.C.J. ; Yeow, Y.T. ; Domyo, H.

  • Author_Institution
    Sch. of Inf. Technol. & Electr. Eng., Queensland Univ., St. Lucia, Qld., Australia
  • Volume
    39
  • Issue
    4
  • fYear
    2003
  • fDate
    2/20/2003 12:00:00 AM
  • Firstpage
    407
  • Lastpage
    408
  • Abstract
    The measured inter-electrode capacitances of silicon-on-sapphire (SOS) MOSFETs are presented and compared with simulation results. It is shown that the variations of capacitances with DC bias differ from those of bulk MOSFETs due to change in body potential variation of the SOS device resulting from electron-hole pair generation through impact ionisation.
  • Keywords
    MOSFET; capacitance; impact ionisation; semiconductor device measurement; silicon-on-insulator; surface potential; DC bias; SOS MOSFETs; Si-Al2O3; back surface inversion; back surface potential; body potential variation; capacitance variations; electron-hole pair generation; impact ionisation; inter-electrode capacitance; simulation results; small-signal capacitance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030226
  • Filename
    1184097
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1157671