DocumentCode :
1157763
Title :
Wavelength-specific pyrometry as a temperature measurement tool
Author :
Delfino, Michelangelo ; Hodul, David T.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Volume :
39
Issue :
1
fYear :
1992
fDate :
1/1/1992 12:00:00 AM
Firstpage :
89
Lastpage :
95
Abstract :
A wavelength-specific 9.4±0.3-μm pyrometer with a 0.41 constant emissivity was used to measure the temperature of 2 to 6 Ω-cm, n-type silicon coated with 1.3 μm of thermal oxide from 270°C to 600°C with an accuracy of ±1%. At lower temperatures, the emissivity monotonically decreases to 0.36 at 200°C with a slope that is proportional to the thermally activated free-carrier absorption of the silicon. This dependency introduces. at any temperature, a temperature uncertainty that is proportional to the emissivity change divided by the constant emissivity. By comparison, the same accuracy inherent in constant emissivity measurements is limited to 430°C when sensed with a more typical 11±3-μm pyrometer. Furthermore, the emissivity change at 200°C is three times larger, resulting in an equally large temperature uncertainty. A four-phase optical model with the constraint of substrate opacity is used to approximate the constant emissivity, as a function of the spectral bandwidth of the pyrometer. The greatest discrepancy between calculation and measurement is 0.14 emissivity or 24°C at 430°C
Keywords :
elemental semiconductors; emissivity; infrared spectra of inorganic solids; pyrometers; semiconductor technology; silicon; spectral methods of temperature measurement; 270 to 600 degC; 9.4 micron; IR transmittance spectrum; Si; Si-SiO2; emissivity; four-phase optical model; n-type; spectral bandwidth; substrate opacity; temperature measurement; thermal oxide; thermally activated free-carrier absorption; wavelength specific pyrometry; Absorption; Bandwidth; Optical scattering; Silicon compounds; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors; Thick films; Wavelength measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.108216
Filename :
108216
Link To Document :
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