• DocumentCode
    1157763
  • Title

    Wavelength-specific pyrometry as a temperature measurement tool

  • Author

    Delfino, Michelangelo ; Hodul, David T.

  • Author_Institution
    Varian Res. Center, Palo Alto, CA, USA
  • Volume
    39
  • Issue
    1
  • fYear
    1992
  • fDate
    1/1/1992 12:00:00 AM
  • Firstpage
    89
  • Lastpage
    95
  • Abstract
    A wavelength-specific 9.4±0.3-μm pyrometer with a 0.41 constant emissivity was used to measure the temperature of 2 to 6 Ω-cm, n-type silicon coated with 1.3 μm of thermal oxide from 270°C to 600°C with an accuracy of ±1%. At lower temperatures, the emissivity monotonically decreases to 0.36 at 200°C with a slope that is proportional to the thermally activated free-carrier absorption of the silicon. This dependency introduces. at any temperature, a temperature uncertainty that is proportional to the emissivity change divided by the constant emissivity. By comparison, the same accuracy inherent in constant emissivity measurements is limited to 430°C when sensed with a more typical 11±3-μm pyrometer. Furthermore, the emissivity change at 200°C is three times larger, resulting in an equally large temperature uncertainty. A four-phase optical model with the constraint of substrate opacity is used to approximate the constant emissivity, as a function of the spectral bandwidth of the pyrometer. The greatest discrepancy between calculation and measurement is 0.14 emissivity or 24°C at 430°C
  • Keywords
    elemental semiconductors; emissivity; infrared spectra of inorganic solids; pyrometers; semiconductor technology; silicon; spectral methods of temperature measurement; 270 to 600 degC; 9.4 micron; IR transmittance spectrum; Si; Si-SiO2; emissivity; four-phase optical model; n-type; spectral bandwidth; substrate opacity; temperature measurement; thermal oxide; thermally activated free-carrier absorption; wavelength specific pyrometry; Absorption; Bandwidth; Optical scattering; Silicon compounds; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors; Thick films; Wavelength measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.108216
  • Filename
    108216