DocumentCode
1157809
Title
A coherent extension of the transport equations in semiconductors incorporating the quantum correction. Part II. Collective transport
Author
Rudan, Massimo ; Reggiani, Susanna ; Gnani, Elena ; Baccarani, Giorgio
Author_Institution
Dept. of Electron., Univ. of Bologna, Italy
Volume
4
Issue
5
fYear
2005
Firstpage
503
Lastpage
509
Abstract
For part I see ibid., vol.4, p.495 (2005). The aim of this investigation is to consistently incorporate quantum corrections in the transport model for applications to nanoscale semiconductor devices. This paper is made of two parts. In Part I, a set of two semiclassical equations were derived, in which the dynamics of the dispersion of the single-particle wave function is accounted for in addition to that of the expectation value of position. The model is founded on an approximate description of the wave function that eliminates the need for the Ehrenfest approximation. This leads to a set of two Newton-like single-particle equations for position and dispersion. Here, in Part II, it is shown that the Lagrangian form of the single-particle equations naturally lends itself to the incorporation of such extended dynamics into the statistical framework. The theory is suitable for different levels of applications: description of the single-particle ballistic dynamics, solution of the generalized Boltzmann equation by Monte Carlo or other methods, and solution of the continuity equations in the position-dispersion space.
Keywords
carrier density; nanoelectronics; semiconductor device models; wave functions; Ehrenfest approximation; Lagrangian single-particle equations; Monte Carlo methods; Newton-like single-particle equations; carrier concentration; collective transport; continuity equations; generalized Boltzmann equation; nanoscale semiconductor devices; position expectation value; position-dispersion space; quantum correction; semiclassical equations; single-particle ballistic dynamics; single-particle wave function; statistical framework; transport equations; Boltzmann equation; Differential equations; Effective mass; Lagrangian functions; Monte Carlo methods; Nanoscale devices; Particle scattering; Poisson equations; Semiconductor devices; Wave functions; Nanoscale devices; quantum corrections; semiconductors; transport;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2005.851412
Filename
1504705
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