Broad-band frequency characterization of double Y-branch nanojunction operating as room-temperature RF to DC rectifier

Author

Bednarz, Lukasz ; Rashmi ; Hackens, Benoît ; Farhi, Ghania ; Bayot, Vincent ; Huynen, Isabelle

Author_Institution

Cermin, Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium

Volume

4

Issue

5

fYear

2005

Firstpage

576

Lastpage

580

Abstract

Room-temperature dc and broad-band high-frequency (HF) to dc conversion measurements of a double Y-branch junction (YBJ) are presented and discussed. Nonlinear dc characteristics of the devices at room temperature are observed and HF to dc conversion up to 40 GHz at room temperature is presented. The HF to dc conversion efficiency degradation is found to be partly due to losses in interconnects feeding the device. A small-signal equivalent circuit of the YBJ is proposed in order to verify the frequency dependence of intrinsic elements.

Keywords

ballistic transport; high-frequency effects; nanotechnology; semiconductor devices; semiconductor junctions; solid-state rectifiers; two-dimensional electron gas; 293 to 298 K; 2D electron gas; 40 GHz; broad-band high-frequency characterization; double Y-branch nanojunction; high frequency-dc conversion efficiency degradation; intrinsic elements; nanotechnology; nonlinear dc characteristics; room-temperature RF-DC rectifier; small-signal equivalent circuit; Electrons; Frequency dependence; HEMTs; Hafnium; Nanotechnology; Radio frequency; Rectifiers; Temperature; Voltage; Waveguide junctions; High-frequency (HF) measurements; Y-branch junction (YBJ); nanotechnology; nonlinear; room temperature; two-dimensional electron gas (2DEG);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2005.851413

Filename

1504716