Title :
Reduced surface sidewall recombination and diffusion in quantum-dot lasers
Author :
Moore, S.A. ; O´Faolain, L. ; Cataluna, M.A. ; Flynn, M.B. ; Kotlyar, M.V. ; Krauss, T.F.
Author_Institution :
Sch. of Phys. & Astron., Univ. of St. Andrews
Abstract :
We examine the surface recombination rate in quantum-dot semiconductor lasers and determine the diffusion length (1.0 mum) and, for the first time, provide a value for surface recombination velocity (5times104 cm/s) in quantum-dot material. As a result of strong carrier confinement in the dots, these values are much lower than in comparable quantum-well lasers (5times105 cm/s and 5 mum, respectively) allowing the creation of narrow (2-3 mum wide) lasers with comparable threshold currents to those of broad area devices
Keywords :
diffusion; quantum dot lasers; surface recombination; carrier confinement; diffusion length; quantum-dot laser; surface recombination rate; surface sidewall recombination; Carrier confinement; Optical materials; Quantum dot lasers; Quantum dots; Quantum well lasers; Radiative recombination; Semiconductor lasers; Semiconductor materials; Surface emitting lasers; Threshold current; Diffusion length; low threshold; quantum-dot lasers; surface recombination;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.881206
