Title :
Photoluminescence of colloidal CdSe/ZnS quantum dots under oxygen atmosphere
Author :
Gia-Wei Shu ; Lee, Wan-Zhen ; Shu, I. Jen ; Shen, Ji-Lin ; Lin, James Cheng-An ; Chang, Walter H. ; Ruaan, Ruoh-Chyu ; Chou, Wu Ching
Author_Institution :
Phys. Dept., Chung Yuan Christian Univ., Chung-li, Taiwan
Abstract :
The effects of oxygen versus vacuum ambients on colloidal CdSe/ZnS quantum dots (QDs) were studied using both continuous and time-resolved photoluminescence (PL) measurements. The PL intensities were found to be an order of magnitude higher in an oxygen atmosphere, which is explained by the passivation of surface defects by oxygen absorption. The decay of PL intensities can be best fitted by a biexponential function with lifetimes of approximately 1 ns for the fast decay and approximately 10 ns for the slow decay. Based on the emission-energy dependence of carrier lifetimes and of the amplitude ratio of the fast-decay component to the slow-decay component, we suggest that the fast and slow PL decay of colloidal CdSe/ZnS QDs is caused by the recombination of delocalized carriers in the internal core states and the localized carriers in the surface states, respectively.
Keywords :
II-VI semiconductors; absorption; cadmium compounds; carrier lifetime; colloids; photoluminescence; selenium compounds; semiconductor quantum dots; surface states; zinc compounds; CdSe-ZnS; biexponential function; carrier lifetimes; colloidal CdSe-ZnS quantum dots; delocalized carrier recombination; emission-energy dependence; fast-decay component; internal core states; localized carriers; optical properties; oxygen absorption; oxygen atmosphere; slow decay component; surface defect passivation; surface states; time-resolved photoluminescence intensity; Absorption; Atmosphere; Atmospheric measurements; Charge carrier lifetime; Elementary particle vacuum; Passivation; Photoluminescence; Quantum dots; Radiative recombination; Zinc compounds; Optical properties; quantum dots (QDs);
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2005.851445