DocumentCode
1158053
Title
Estimation of effective diffusion time in a rapid thermal diffusion using a solid diffusion source
Author
Cho, Byung-Jin ; Park, Sung-Kye ; Kim, Choong-ki
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Volume
39
Issue
1
fYear
1992
fDate
1/1/1992 12:00:00 AM
Firstpage
111
Lastpage
117
Abstract
Two-step rapid thermal diffusion (RTD) of phosphorus and boron using a solid diffusion source is described. From the application of the Boltzmann-Matano method to SIMS profiles of phosphorus and boron after RTD, it has been found that some additional correction terms to the effective diffusion time must be introduced. In the phosphorus diffusion case, the increment of the effective diffusion time due to the supersaturation of point defects during the cooling cycle is about 3 s. In the case of boron diffusion, the additional effective diffusion time is a strong function of diffusion temperature. This has been explained as the effect of initial growth of the boron-rich layer during the glass-transfer process. The introduction of additional correction terms to the effective diffusion time makes it possible to treat the RTD process in a similar manner to normal diffusion
Keywords
boron; diffusion in solids; doping profiles; elemental semiconductors; incoherent light annealing; phosphorus; secondary ion mass spectra; semiconductor doping; silicon; Boltzmann-Matano method; RTD; SIMS profiles; Si:B; Si:P; diffusion temperature; effective diffusion time; glass-transfer process; point defect supersaturation; rapid thermal diffusion; solid diffusion source; Boron; Cooling; Furnaces; Mathematical model; Modems; Rapid thermal processing; Silicon; Solids; Tail; Temperature dependence;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.108219
Filename
108219
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