DocumentCode :
1158053
Title :
Estimation of effective diffusion time in a rapid thermal diffusion using a solid diffusion source
Author :
Cho, Byung-Jin ; Park, Sung-Kye ; Kim, Choong-ki
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Volume :
39
Issue :
1
fYear :
1992
fDate :
1/1/1992 12:00:00 AM
Firstpage :
111
Lastpage :
117
Abstract :
Two-step rapid thermal diffusion (RTD) of phosphorus and boron using a solid diffusion source is described. From the application of the Boltzmann-Matano method to SIMS profiles of phosphorus and boron after RTD, it has been found that some additional correction terms to the effective diffusion time must be introduced. In the phosphorus diffusion case, the increment of the effective diffusion time due to the supersaturation of point defects during the cooling cycle is about 3 s. In the case of boron diffusion, the additional effective diffusion time is a strong function of diffusion temperature. This has been explained as the effect of initial growth of the boron-rich layer during the glass-transfer process. The introduction of additional correction terms to the effective diffusion time makes it possible to treat the RTD process in a similar manner to normal diffusion
Keywords :
boron; diffusion in solids; doping profiles; elemental semiconductors; incoherent light annealing; phosphorus; secondary ion mass spectra; semiconductor doping; silicon; Boltzmann-Matano method; RTD; SIMS profiles; Si:B; Si:P; diffusion temperature; effective diffusion time; glass-transfer process; point defect supersaturation; rapid thermal diffusion; solid diffusion source; Boron; Cooling; Furnaces; Mathematical model; Modems; Rapid thermal processing; Silicon; Solids; Tail; Temperature dependence;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.108219
Filename :
108219
Link To Document :
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