Title :
Rapid isothermal processing for fabrication of GaAs-based electronic devices [HBTs]
Author :
Pearton, Stephen J. ; Ren, Fan ; Katz, Avishay ; Fullowan, T.R. ; Abernathy, C.R. ; Hobson, W.S. ; Kopf, Rose F.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
1/1/1992 12:00:00 AM
Abstract :
The use of rapid isothermal processing (RIP) is detailed for each of the three annealing steps in the fabrication of heterostructure-based devices such as heterojunction bipolar transistors (HBTs). RIP can be used for the alloying of ohmic metal contacts, annealing of ion-bombarded regions for device isolation or parasitic capacitance reduction, and for conventional implant activation annealing. High-speed (fT=65 GHz) HBTs were achieved using RIP for all of the required heating steps. The authors compare the use of several types of silicon carbide-coated graphite susceptors for eliminating slip formation on 2- and 3-in-diameter GaAs wafers during high-temperature implant activation annealing
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; incoherent light annealing; semiconductor technology; solid-state microwave devices; 65 GHz; GaAs wafers; GaAs-GaAlAs; HBTs; annealing; cutoff frequency; heterojunction bipolar transistors; heterostructure-based devices; implant activation annealing; ion-bombarded regions; ohmic metal contacts; parasitic capacitance reduction; rapid isothermal processing; Alloying; Annealing; Fabrication; Gallium arsenide; Heating; Heterojunction bipolar transistors; Implants; Isothermal processes; Parasitic capacitance; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
