Title :
Rapid isothermal annealing of high- and low-energy ion-implanted InP and In0.53Ga0.47As
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
fDate :
1/1/1992 12:00:00 AM
Abstract :
Rapid isothermal annealing (RIA) was performed on 0.5-16-MeV Si +, 1-MeV Be+, and 150-keV Ge+ implanted InP:Fe and 380-keV Fe+ implanted InGaAs. Annealings were performed in the temperature range 800-925°C using an InP proximity wafer in addition to the Si3N4 dielectric cap. Dopant activations close to 100% were obtained for 3×1014 cm-2 Si+ and 2×1014 cm-2 Be+ implants in InP:Fe. For the elevated temperature (200°C) 1×1014 cm-2 Ge+ implant, a maximum of 50% activation was obtained. No redistribution of dopant was observed for Si and Ge implants due to annealing. However, redistribution of dopant was seen for Be and Fe implants due to annealing. Phosphorous coimplantation has helped to eliminate the Be in-diffusion problem in InP, but did not help to reduce Fe in-diffusion and redistribution in InGaAs. Using an RIA cycle with low temperature and short duration is the only solution to minimize Fe redistribution in InGaAs
Keywords :
III-V semiconductors; doping profiles; gallium arsenide; incoherent light annealing; indium compounds; ion implantation; 0.5 to 16 MeV; 1 MeV; 150 keV; 380 keV; 800 to 925 degC; In0.53Ga0.47As:Fe; InP-Si3N4; InP:Fe,Be; InP:Fe,Ge; InP:Fe,Si; coimplantation; dopant activation; dopant redistribution; in-diffusion problem; ion implantation; proximity wafer; rapid isothermal annealing; Annealing; Electron mobility; Implants; Indium gallium arsenide; Indium phosphide; Iron; Isothermal processes; Microwave devices; Millimeter wave devices; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
