The effects of point defects on the electrical activation of Si-implanted GaAs during rapid thermal annealing

Author

Lee, Jong-Lam ; Wei, Long ; Tanigawa, Shoichiro ; Nakagawa, Tadashi ; Ohta, Kimihiro ; Lee, Jeong Yong

Author_Institution

Inst. of Mater. Sci., Tsukuba Univ., Ibaraki, Japan

Volume

39

Issue

1

fYear

1992

fDate

1/1/1992 12:00:00 AM

Firstpage

176

Lastpage

183

Abstract

The effects of point defects on the electrical activation of Si-implanted GaAs during rapid thermal annealing were investigated using slow positron beam, cross-sectional transmission electron microscopy, and Hall measurements. The increase of the Ga vacancy concentration in the GaAs substrate induced by the SiO₂ cap layer on the substrate during annealing was observed to decrease the activation efficiency and the number of extrinsic stacking faults via the recombination of interstitials with vacancies. It was found that the efficiency of the carrier creation is not dependent upon the Ga vacancy concentration during the rapid thermal annealing of Si-implanted GaAs. Hence, it is proposed that the electrical activation of Si-implanted GaAs is not due to implantation-induced vacancies but to the self-exchange of interstitial Si atoms with the host Ga substitutional atoms

Keywords

Hall effect; III-V semiconductors; gallium arsenide; impurity-defect interactions; incoherent light annealing; interstitials; ion implantation; positron annihilation in liquids and solids; silicon; stacking faults; transmission electron microscope examination of materials; vacancies (crystal); Ga vacancy concentration; GaAs:Si; GaAs:Si-SiO₂; Hall measurements; SiO₂ cap layer; carrier creation efficiency; cross-sectional transmission electron microscopy; electrical activation; extrinsic stacking faults; interstitial Si atoms; ion implantation; point defects; rapid thermal annealing; slow positron beam; Atomic layer deposition; Atomic measurements; Electron beams; Gallium arsenide; Materials science and technology; Positrons; Rapid thermal annealing; Stress; Substrates; Transmission electron microscopy;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.108227

Filename

108227