Title :
Rapid isothermal processing of Pt/Ti contacts to p-type III-V binary and related ternary materials
Author :
Katz, Avishay ; Chu, Sung Nee George ; Weir, Bonnie E. ; Abernathy, C.R. ; Hobson, W.S. ; Pearton, Stephen J. ; Savin, W.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
1/1/1992 12:00:00 AM
Abstract :
Results of an extensive study of the interfacial intermixing and interaction of the Pt/Ti bilayer metallization to seven III-V binary and related ternary compound semiconductor systems, as well as the contact electrical properties, are given. Pt/Ti contact to InAs and In0.53 Ga0.47As were ohmic as deposited, while the same metallization scheme on GaAs, GaP, InP, In0.52Al0.48 As, and Ga0.7Al0.3As provided a rectifying contact as-deposited. The latter group of contacts, with the exception of InP and GaP, were transformed to an ohmic contact as a result of rapid thermal processing (RTP) at the temperature range of 300 to 450°C. A linear correlation between the semiconductor bandgap value and the Schottky-barrier height, measured in the Pt/Ti contacts, was observed
Keywords :
Schottky effect; chemical interdiffusion; incoherent light annealing; metallisation; ohmic contacts; platinum; titanium; 300 to 450 degC; Pt-Ti-Ga0.7Al0.3As; Pt-Ti-GaAs; Pt-Ti-GaP; Pt-Ti-In0.52Al0.48As; Pt-Ti-In0.53Ga0.47As; Pt-Ti-InAs; Pt-Ti-InP; RTP; Schottky-barrier height; bilayer metallization; contact electrical properties; interfacial intermixing; ohmic contacts; rapid thermal processing; rectifying contact; semiconductor bandgap; Epitaxial growth; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Inorganic materials; Isothermal processes; Manufacturing processes; Metallization; Ohmic contacts; Rapid thermal processing;
Journal_Title :
Electron Devices, IEEE Transactions on
