DocumentCode
1159047
Title
Structural and electrical properties of furnace and rapid thermally annealed LPCVD WSi2 films on single-crystal, polycrystalline, and amorphous silicon substrates
Author
Shenai, Krishna
Author_Institution
Gen. Elec. Corp. Res. & Dev. Center, Schenectady, NY, USA
Volume
39
Issue
1
fYear
1992
fDate
1/1/1992 12:00:00 AM
Firstpage
193
Lastpage
199
Abstract
Alternate approaches to obtain low-resistance, low-pressure chemical vapor deposition (LPCVD) WSi2 films for application as interconnections in silicon integrated circuit technologies were investigated. The silicide films were deposited on three different substrates and annealed in two different systems. The silicide films deposited on the doped substrates as well as films doped using ion implantation were analyzed. The silicide microstructure, electrical film conductivity, and dopant redistribution were studied as a function of the process variants. An optimum set of annealing conditions were identified that resulted in excellent silicide thin-film properties. A correlation between the material and electrical properties is provided using the experimental data
Keywords
CVD coatings; annealing; incoherent light annealing; metallic thin films; metallisation; tungsten compounds; RTA; Si substrate; WSi2-Si; amorphous substrate; dopant redistribution; electrical film conductivity; electrical properties; furnace annealing; integrated circuit technologies; interconnections; polycrystalline substrate; silicide microstructure; single crystal substrate; Chemical vapor deposition; Furnaces; Integrated circuit interconnections; Integrated circuit technology; Ion implantation; Rapid thermal annealing; Semiconductor films; Silicides; Silicon; Substrates;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.108229
Filename
108229
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