Title :
Characterization of semiconducting iron disilicide obtained by LRP/CVD
Author :
Regolini, J.L. ; Trincat, F. ; Sagnes, I. ; Shapira, Y. ; Brémond, G. ; Bensahel, D.
Author_Institution :
France Telecom Centre d´´Etudes des Telecommun., Meylan, France
fDate :
1/1/1992 12:00:00 AM
Abstract :
A solid iron source was used in a limited reaction processing (LRP) system to deposit β-FeSi2 selectively and epitaxially onto patterned silicon wafers. The layers of stoichiometric composition show two main photoluminescence emission bands (at 0.79 and 0.94 eV) and an extrinsic conductivity energy level (at 0.10 eV). Selective and mostly epitaxial deposition of semiconducting iron disilicide has been obtained by LRP and a solid Fe source producing chlorinated metal species. The films are formed by columns epitaxially oriented with the substrate. Electrical and optical characterization show that the best transport properties are obtained for samples grown at 850°C. The direct bandgap transition was observed and hole conductivity with mobility values above 50 cm2/V/s were obtained
Keywords :
Hall effect; carrier mobility; electronic conduction in crystalline semiconductor thin films; iron compounds; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; vapour phase epitaxial growth; 850 degC; FeSi3-Si; Hall mobility; beta phase; carrier mobility; direct bandgap transition; extrinsic conductivity energy level; hole conductivity; limited reaction processing; optical characterization; patterned Si wafers; photoluminescence emission bands; selective epitaxial growth; solid Fe source; stoichiometric composition; transport properties; Conductivity; Energy states; Iron; Optical films; Photoluminescence; Semiconductivity; Semiconductor films; Silicon; Solids; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
