Monolithic integration of a spot size transformer with a planar buried heterostructure InGaAsP/InP-laser using the shadow masked growth technique

Author

Moerman, I. ; D´Hondt, M. ; Vanderbauwhede, W. ; Coudenys, G. ; Haes, J. ; de Dobbelaere, P. ; Baets, R. ; Van Daele, P. ; Demeester, P.

Author_Institution

Dept. of Inf. Technol., Ghent Univ., Belgium

Volume

6

Issue

8

fYear

1994

Firstpage

888

Lastpage

890

Abstract

We present a vertically tapered InGaAsP/InP planar buried heterostructure (PBB) laser for low loss coupling to single-mode fibers. To achieve the vertical tapering we make use of the shadow masked growth technique. Tapered lasers with beam divergences of 15/spl deg/ in both lateral and transverse directions were realized. In comparison with untapered lasers, the coupling losses to cleaved single-mode fibers could be reduced by 4.8 dB down to 5.8 dB.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; masks; optical couplers; optical fibres; optical losses; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 48 dB; 5.8 dB; InGaAsP-InP; InGaAsP/InP-laser; beam divergences; cleaved single-mode fibers; coupling losses; lateral directions; low loss coupling; monolithic integration; planar buried heterostructure; planar buried heterostructure laser; shadow masked growth technique; single-mode fibers; spot size transformer; transverse directions; vertically tapered; Fiber lasers; Indium phosphide; Laser modes; Monolithic integrated circuits; Optical coupling; Optical fiber communication; Optical fiber devices; Optical fiber losses; Optical waveguides; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.313042

Filename

313042