Determination of nonlinear gain coefficient of semiconductor lasers from above threshold spontaneous emission measurement

Author

Girardin, F. ; Duan, G.-H. ; Chabran, C. ; Gallion, P. ; Blez, M. ; Allovon, M.

Author_Institution

Dept. Commun., Ecole Nat. Superieure des Telecommun., Paris, France

Volume

6

Issue

8

fYear

1994

Firstpage

894

Lastpage

896

Abstract

The measurement of spontaneous emission power above threshold has shown a nearly linear increase with biasing current in a 1.55-μm InGaAs/InGaAlAs multiple quantum-well laser. Based on this measurement, we propose a novel experimental method to determine the nonlinear gain coefficient. The obtained value is 1.2×10/sup -17/ cm³ for the laser used. This value corresponds reasonably to that obtained by chirp-to-modulated-power ratio method, confirming the validity of this new measurement method.

Keywords

III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; indium compounds; laser variables measurement; nonlinear optics; semiconductor lasers; stimulated emission; 1.55 mum; InGaAs-InGaAlAs; InGaAs/InGaAlAs multiple quantum-well laser; above threshold spontaneous emission measurement; biasing current; chirp-to-modulated-power ratio method; nonlinear gain coefficient; semiconductor lasers; spontaneous emission power; Charge carrier density; Current measurement; Gain measurement; Laser modes; Power lasers; Power measurement; Quantum well lasers; Semiconductor lasers; Spontaneous emission; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.313044

Filename

313044