Reflection-induced changes in the optical spectra of 980-nm QW lasers

Author

Giles, C.R. ; Erdogan, T. ; Mizrahi, V.

Author_Institution

Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA

Volume

6

Issue

8

fYear

1994

Firstpage

903

Lastpage

906

Abstract

High-power 980-nm strained quantum well diode lasers having low reflectivity facet coatings are sensitive to weak reflections that affect the laser emission spectrum. In devices having 0.2% output facet reflectivity, 2% reflections from an external plane mirror shifted the output spectrum from 970 to 1000 mn. Wavelength stabilization and improved immunity to spurious reflections were demonstrated using bulk grating and fiber-grating reflectors. Continuous laser tuning from 958 to 1011 nm was achieved with 1% net grating reflectivity.<>

Keywords

III-V semiconductors; diffraction gratings; gallium arsenide; indium compounds; laser tuning; reflectivity; semiconductor lasers; 958 to 1011 nm; 970 to 1000 nm; 980 nm; InGaAs; QW lasers; bulk grating; continuous laser tuning; external plane mirror; facet coatings; fiber-grating reflectors; grating reflectivity; high-power; laser emission spectrum; low reflectivity; optical spectra; output facet reflectivity; output spectrum; reflection-induced changes; spurious reflections; strained quantum well diode lasers; wavelength stabilization; weak reflections; Coatings; Diode lasers; Fiber lasers; Laser transitions; Laser tuning; Optical reflection; Optical sensors; Quantum well lasers; Reflectivity; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.313047

Filename

313047