Threshold current of 670-nm AlGaInP strained quantum well lasers

Author

Smowton, P.M. ; Summers, H.D. ; Rees, P. ; Blood, P.

Author_Institution

Dept. of Phys. & Astron., Univ. of Wales Coll. of Cardiff, UK

Volume

6

Issue

8

fYear

1994

Firstpage

910

Lastpage

912

Abstract

By means of gain-current calculations we have examined the factors which determine the threshold current of compressively strained Ga/sub x/In/sub 1-x/P/AlGaInP quantum well lasers for the various well width/composition (x) combinations which give a transition wavelength of 670 nm. In addition to valence band modifications we find that the increasing depth and decreasing width of the well are important in decreasing the current as the strain increases. We reveal the important role of well width fluctuations in devices with high compressive strain.<>

Keywords

III-V semiconductors; aluminium compounds; indium compounds; laser transitions; semiconductor lasers; 670 nm; AlGaInP; Ga/sub x/In/sub 1-x/P/AlGaInP quantum well lasers; GaInP-AlGaInP; compressively strained; decreasing width; gain-current calculations; high compressive strain; increasing depth; strain; strained quantum well lasers; threshold current; transition wavelength; valence band modifications; well composition; well width; well width fluctuations; Blood; Capacitive sensors; Effective mass; Fluctuations; Laser transitions; Optical materials; Photonic band gap; Quantum well lasers; Temperature; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.313049

Filename

313049