DocumentCode :
1159330
Title :
Linewidth enhancement factor of vertical-cavity surface-emitting laser diodes
Author :
Möller, B. ; Zeeb, E. ; Fiedler, U. ; Hackbarth, T. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
Volume :
6
Issue :
8
fYear :
1994
Firstpage :
921
Lastpage :
923
Abstract :
The linewidth enhancement factor /spl alpha/ characterizes the performance of semiconductor lasers, such as spectral linewidth broadening for CW operation and wavelength chirping under high-frequency modulation. We have for the first time determined the /spl alpha/ factor of vertical-cavity surface-emitting lasers from the measured linewidth-power product and more precisely from the frequency to amplitude modulation ratio at high-frequency current modulation. Both methods provide the same /spl alpha/ factor of 3.7. The minimum linewidth was as narrow as 70 MHz and the linewidth-power product was 5.4 MHz/spl middot/mW neglecting the residual linewidth.<>
Keywords :
gallium compounds; indium compounds; optical modulation; semiconductor lasers; spectral line breadth; /spl alpha/ factor; CW operation; InGaAs; InGaAs quantum well VCEL; frequency to amplitude modulation ratio; high-frequency current modulation; linewidth enhancement factor; measured linewidth-power product; performance; spectral linewidth broadening; vertical-cavity surface-emitting laser diodes; wavelength chirping; Chirp modulation; Diode lasers; Gallium arsenide; Optical surface waves; Power generation; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Wavelength measurement;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.313052
Filename :
313052
Link To Document :
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