Title :
Strained layer (1.5 μm) InP/InGaAsP lasing opto-electronic switch (LOES)
Author :
Swoger, J.H. ; Qiu, Charlie ; Simmons, J.G. ; Thompson, D.A. ; Shepherd, F. ; Beckett, D. ; Cleroux, M.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Abstract :
We present for the first time a lasing opto-electronic switch (LOES) fabricated in the InP/InGaAsP system. In this device the active region is composed of four 63 /spl Aring/ compressively strained quantum wells. A lasing threshold of 104 mA, or 6933 A/cm2, has been observed at a temperature of 298 K, with an external differential quantum efficiency of 14%. The lasing wavelength is centered at 1.52 μm. The current-voltage characteristics manifest pronounced differential negative resistance, characterized by switching and holding voltages of 6.8 V and 1.6 V, respectively, and a switching current density of 33 A/cm2. The OFF and ON state resistances are approximately 150 k/spl Omega/ and 4 /spl Omega/, respectively.
Keywords :
gallium arsenide; gallium compounds; indium compounds; internal stresses; negative resistance; optical switches; semiconductor lasers; 1.5 mum; 1.6 V; 150 kohm; 298 K; 4 ohm; 6.8 V; InP-InGaAsP; OFF state resistances; ON state resistances; active region; compressively strained quantum wells; current-voltage characteristics; differential negative resistance; external differential quantum efficiency; holding voltages; lasing threshold; lasing wavelength; strained layer InP/InGaAsP lasing opto-electronic switch; switching current density; switching voltages; temperature; Chemical lasers; Electric resistance; Electric variables; Indium phosphide; Optical bistability; Optical materials; Stimulated emission; Switches; Temperature; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
