Improving the Linearity of GaN HEMTs by Optimizing Epitaxial Structure

Author

Khalil, Ibrahim ; Bahat-Treidel, Eldad ; Schnieder, Frank ; Würfl, Joachim

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin

Volume

56

Issue

3

fYear

2009

fDate

3/1/2009 12:00:00 AM

Firstpage

361

Lastpage

364

Abstract

This paper presents an effective method of improving the linearity of GaN/AlGaN high-electron mobility transistors (HEMTs) by optimizing barrier (AlGaN Layer) thickness or implementing doped GaN cap or a combination of both. HEMT devices with different epitaxial structures were simulated, fabricated, and measured to demonstrate this. Third-order intermodulation distortion and adjacent channel power ratio measurements were performed in order to compare linearity experimentally. A significant improvement of linearity is observed for an optimized architecture.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; GaN-AlGaN; HEMT; adjacent channel power ratio; epitaxial structure; high-electron mobility transistors; third-order intermodulation distortion; Aluminum gallium nitride; Distortion measurement; Gallium nitride; HEMTs; Intermodulation distortion; Linearity; MODFETs; Optimization methods; Performance evaluation; Power measurement; Amplifier distortion; GaN high-electron mobility transistor (HEMT); cross modulation distortion; epitaxial layers; intermodulation distortion;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.2011849

Filename

4783089