Title :
A CMOS image sensor with a double-junction active pixel
Author :
Findlater, K.M. ; Renshaw, D. ; Hurwitz, J.E.D. ; Henderson, R.K. ; Purcell, M.D. ; Smith, S.G. ; Bailey, T.E.R.
Author_Institution :
STMicroelectron. Imaging Div., Edinburgh, UK
Abstract :
A CMOS image sensor that employs a vertically integrated double-junction photodiode structure is presented. This allows color imaging with only two filters. The sensor uses a 184*154 (near-QCIF) 6-transistor pixel array at a 9.6-/spl mu/m pitch implemented in 0.35-/spl mu/m technology. Results of the device characterization are presented. The imaging performance of an integrated two-filter color sensor is also projected, using measurements and software processing of subsampled images from the monochrome sensor with two color filters.
Keywords :
CMOS image sensors; image colour analysis; optical filters; photodiodes; 0.35 micron; 9.6 micron; CMOS; color filters; color imaging; device characterization; double-junction active pixel; image sensor; monochrome sensor; pixel array; software processing; two-filter color sensor; vertically integrated double-junction photodiode structure; Image color analysis; Optical filters; Photodiodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.807259
