Title :
7.1 GHz bandwidth monolithically integrated In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As PIN-HBT transimpedance photoreceiver
Author :
Cowles, J. ; Gutierrez-Aitken, A.L. ; Bhattacharya, Pallab ; Haddad, G.I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A monolithically integrated photoreceiver using an InAlAs/InGaAs HBT-based transimpedance amplifier has been fabricated and characterized. The p-i-n photodiode is implemented using the base-collector junction of the HBT. The 5 μm×5 μm emitter area transistors have self-aligned base metal and non-alloyed Ti/Pt/Au contacts. Discrete transistors demonstrated fT and fmax of 54 GHz and 51 GHz, respectively. The amplifier demonstrated a -3 dB transimpedance bandwidth of 10 GHz and a gain of 40 dB/spl Omega/. The integrated photoreceiver with a 10 μm×10 μm p-i-n photodiode showed a -3 dB bandwidth of 7.1 GHz.
Keywords :
III-V semiconductors; amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 10 GHz; 10 mum; 5 mum; 51 GHz; 54 GHz; 7.1 GHz; Au; HBT-based transimpedance amplifier; In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As; InAlAs-InGaAs; PIN-HBT transimpedance photoreceiver; Pt; Ti; bandwidth monolithically integrated; base-collector junction; discrete transistors; emitter area transistors; integrated photoreceiver; nonalloyed Ti/Pt/Au contacts; p-i-n photodiode; self-aligned base metal; transimpedance bandwidth; Absorption; Bandwidth; Circuits; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Laboratories; Optical noise; P-i-n diodes; PIN photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
