Title :
Photo-injected carrier distributions in metal-semiconductor-metal photodetectors imaged by photoluminescence microscopy
Author :
Reuter, E.E. ; Gu, S.Q. ; Xu, Q. ; Wohlmuth, W. ; Adesida, I. ; Bishop, S.G.
Author_Institution :
Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL, USA
Abstract :
The effects of size and transparency of fingers on the spatial distribution of radiative recombination of photoinjected carriers in metal-semiconductor-metal photodiodes have been investigated using photoluminescence microscopy. Investigations of detectors having fingers and spaces of 20 μm showed a depletion region width which varies with bias voltage in a quasi-one-dimensional Schottky diode functional form. Regions of non-uniform electric field were observed in the corners of titanium-gold electrode devices and underneath indium-tin-oxide electrodes. Photodiodes with 3 μm wide fingers were found to have a depletion region which did not behave in a quasi-one-dimensional manner.
Keywords :
carrier density; metal-semiconductor-metal structures; optical microscopy; photodetectors; photodiodes; photoluminescence; transparency; 20 mum; 3 mum; bias voltage; depletion region width; imaged; indium-tin-oxide electrodes; metal-semiconductor-metal photodetectors; metal-semiconductor-metal photodiodes; nonuniform electric field; photo-injected carrier distributions; photoinjected carriers; photoluminescence microscopy; quasi-one-dimensional Schottky diode functional form; radiative recombination; spatial distribution; titanium-gold electrode devices; transparency; Detectors; Electrodes; Fingers; Microscopy; Nonuniform electric fields; Photodiodes; Photoluminescence; Radiative recombination; Schottky diodes; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
