Capacitance control of the Al/TiW/amorphous-Si system by rapid thermal processing

Author

Berger, S. ; Komen, Y. ; Weiss, B.Z.

Author_Institution

Dept. of Mater. Eng., Technion, Haifa, Israel

Volume

39

Issue

1

fYear

1992

fDate

1/1/1992 12:00:00 AM

Firstpage

208

Lastpage

209

Abstract

Rapid thermal processing (RTP) of the Al/TiW/amorphous-Si system results in a decrease of the capacitance by about order of magnitude when the temperature is increased from 300 to 500°C. The general characteristics of the functions, capacitance versus applied voltage and versus applied frequency, remains the same in this range of temperatures. Rapid thermal processing can be used to control the gradual decrease of the capacitance of the Al/TiW/amorphous-Si system by up to approximately one order of magnitude without changing the general characteristic of the C-V curves

Keywords

aluminium; amorphous semiconductors; capacitance; elemental semiconductors; incoherent light annealing; metallisation; semiconductor-metal boundaries; silicon; titanium alloys; tungsten alloys; 300 to 500 degC; Al-TiW-Si; C-V characteristics; RTP; capacitance control; rapid thermal processing; Amorphous materials; Artificial intelligence; Capacitance; Control systems; Frequency; Rapid thermal processing; Semiconductor films; Substrates; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.108234

Filename

108234