A 9-V/Lux-s 5000-frames/s 512×512 CMOS sensor

Author

Krymski, Alexander I. ; Tu, Nianrong

Author_Institution

Micron Technol. Inc., Pasadena, CA, USA

Volume

50

Issue

1

fYear

2003

fDate

1/1/2003 12:00:00 AM

Firstpage

136

Lastpage

143

Abstract

A high-responsivity 9-V/Lux-s high-speed 5000-frames/s (at full 512×512 resolution) CMOS active pixel sensor (APS) is presented in this paper. The sensor was designed for a 0.35-μm 2P3M CMOS sensor process and utilizes a five-transistor pixel to provide a true parallel shutter. Column-parallel analog-to-digital converter (ADC) architecture yields fast readout from pixels and digitization of the data simultaneously with acquiring a new frame. The chip has a two-row SRAM to store data from the ADC and read previous rows of data out of the chip. There are a total of 16 parallel ports operating up to 90 MHz delivering ∼1.3 Gpixel/s or 13 Gb/s of data at the maximum rate. In conclusion, a comparison between two high-speed digital CMOS sensor architectures, which are a column-parallel APS and a digital pixel sensor (DPS), is conducted.

Keywords

CMOS digital integrated circuits; CMOS image sensors; analogue-digital conversion; 0.35 micron; 13 Gbit/s; 262144 pixel; 512 pixel; 90 MHz; CMOS sensor; active pixel sensor; column-parallel APS; column-parallel analog-to-digital converter; digital pixel sensor; high-speed digital CMOS sensor architectures; parallel shutter; readout; two-row SRAM; Analog-digital conversion; CMOS image sensors; CMOS process; Cameras; Charge coupled devices; Government; Inspection; Pixel; Random access memory; Testing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.806958

Filename

1185174