Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter

Author

Hashemi, Pouya ; Gomez, Leonardo ; HOyt, Judy L.

Author_Institution

Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA

Volume

30

Issue

4

fYear

2009

fDate

4/1/2009 12:00:00 AM

Firstpage

401

Lastpage

403

Abstract

The effects of high-level uniaxial tensile strain on the performance of gate-all-around (GAA) Si n-MOSFETs are investigated for nanowire (NW) diameters down to 8 nm. Suspended strained-Si NWs with ~2-GPa uniaxial tension were realized by nanopatterning-induced unilateral relaxation of ultrathin-body 30% strained-Si-directly-on-insulator substrates. Based on these NWs, GAA strained-Si n-MOSFETs were fabricated with a Si thickness of ~8 nm and NW widths in the range of 50 nm down to 8 nm. The GAA strained-Si MOSFETs show excellent subthreshold swing and cutoff behavior, and approximately two times current drive and intrinsic transconductance enhancement compared to similar unstrained Si devices.

Keywords

MOSFET; elemental semiconductors; nanopatterning; nanowires; silicon; silicon-on-insulator; tensile strength; Si; gate-all-around; high-level uniaxial tensile strain; intrinsic transconductance enhancement; n-MOSFET; nanopatterning; nanowire diameter; strained-Si-directly-on-insulator substrates; ultrathin-body; unilateral relaxation; Gate all around (GAA); n-MOSFET; nanowire (NW); strained Si; uniaxial tensile;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2013877

Filename

4783108