DocumentCode :
1159627
Title :
Amorphous silicon active pixel sensor readout circuit for digital imaging
Author :
Karim, Karim S. ; Nathan, Arokia ; Rowlands, John Alan
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Ont., Canada
Volume :
50
Issue :
1
fYear :
2003
fDate :
1/1/2003 12:00:00 AM
Firstpage :
200
Lastpage :
208
Abstract :
The most widely used architecture in large-area amorphous silicon (a-Si) flat panel imagers is a passive pixel sensor (PPS), which consists of a detector and a readout switch. While the PPS has the advantage of being compact and amenable toward high-resolution imaging, reading small PPS output signals requires external column charge amplifiers that produce additional noise and reduce the minimum readable sensor input signal. This work presents a current-mediated amorphous silicon active pixel readout circuit that performs on-pixel amplification of noise-vulnerable sensor input signals to minimize the effect of external readout noise sources associated with "off-chip" charge amplifiers. Results indicate excellent small-signal linearity along with a high, and programmable, charge gain. In addition, the active pixel circuit shows immunity to shift in threshold voltage that is characteristic of a-Si devices. Preliminary circuit noise results and analysis appear promising for its use in noise-sensitive, large-area, medical diagnostic imaging applications such as digital fluoroscopy.
Keywords :
CMOS image sensors; amorphous semiconductors; amplification; elemental semiconductors; flicker noise; integrated circuit noise; readout electronics; silicon; thermal noise; Si; amorphous Si active pixel sensor; circuit noise; current-mediated active pixel readout circuit; digital fluoroscopy; integrated pixel amplifier circuit; large-area flat panel imagers; medical diagnostic imaging applications; noise-vulnerable sensor input signals; on-pixel amplification; programmable charge gain; small-signal linearity; threshold voltage shift immunity; Active noise reduction; Amorphous silicon; Circuit noise; Detectors; Digital images; High-resolution imaging; Image sensors; Noise reduction; Pixel; Switches;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2002.806968
Filename :
1185182
Link To Document :
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