• DocumentCode
    1159627
  • Title

    Amorphous silicon active pixel sensor readout circuit for digital imaging

  • Author

    Karim, Karim S. ; Nathan, Arokia ; Rowlands, John Alan

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Ont., Canada
  • Volume
    50
  • Issue
    1
  • fYear
    2003
  • fDate
    1/1/2003 12:00:00 AM
  • Firstpage
    200
  • Lastpage
    208
  • Abstract
    The most widely used architecture in large-area amorphous silicon (a-Si) flat panel imagers is a passive pixel sensor (PPS), which consists of a detector and a readout switch. While the PPS has the advantage of being compact and amenable toward high-resolution imaging, reading small PPS output signals requires external column charge amplifiers that produce additional noise and reduce the minimum readable sensor input signal. This work presents a current-mediated amorphous silicon active pixel readout circuit that performs on-pixel amplification of noise-vulnerable sensor input signals to minimize the effect of external readout noise sources associated with "off-chip" charge amplifiers. Results indicate excellent small-signal linearity along with a high, and programmable, charge gain. In addition, the active pixel circuit shows immunity to shift in threshold voltage that is characteristic of a-Si devices. Preliminary circuit noise results and analysis appear promising for its use in noise-sensitive, large-area, medical diagnostic imaging applications such as digital fluoroscopy.
  • Keywords
    CMOS image sensors; amorphous semiconductors; amplification; elemental semiconductors; flicker noise; integrated circuit noise; readout electronics; silicon; thermal noise; Si; amorphous Si active pixel sensor; circuit noise; current-mediated active pixel readout circuit; digital fluoroscopy; integrated pixel amplifier circuit; large-area flat panel imagers; medical diagnostic imaging applications; noise-vulnerable sensor input signals; on-pixel amplification; programmable charge gain; small-signal linearity; threshold voltage shift immunity; Active noise reduction; Amorphous silicon; Circuit noise; Detectors; Digital images; High-resolution imaging; Image sensors; Noise reduction; Pixel; Switches;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.806968
  • Filename
    1185182