Title :
Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon
Author :
Holland, Stephen E. ; Groom, Donald E. ; Palaio, Nick P. ; Stover, Richard J. ; Wei, Mingzhi
Author_Institution :
Lawrence Berkeley Nat. Lab., CA, USA
fDate :
1/1/2003 12:00:00 AM
Abstract :
Charge-coupled devices (CCDs) have been fabricated on high-resistivity, n-type silicon. The resistivity, on the order of 10 000 Ω·cm, allows for depletion depths of several hundred micrometers. Fully depleted, back-illuminated operation is achieved by the application of a bias voltage to an ohmic contact on the wafer back side consisting of a thin in situ doped polycrystalline silicon layer capped by indium tin oxide and silicon dioxide. This thin contact allows for a good short-wavelength response, while the relatively large depleted thickness results in a good near-infrared response.
Keywords :
CCD image sensors; MOSFET; astronomical telescopes; capacitance; dark conductivity; focal planes; integrated circuit noise; leakage currents; ohmic contacts; 1E4 ohmcm; ITO; ITO capping; InSnO; SIMS depth profile; Si; SiO2; SiO2 capping; astronomical telescopes; bias voltage; buried channel PMOSFET; charge-coupled devices; dark current; depletion depths; fully depleted back-illuminated CCDs; high-resistivity n-Si; inverse square capacitance; near-infrared response; noise; ohmic contact; reverse leakage current; short-wavelength response; thin in situ doped polycrystalline silicon layer; wafer back side; Absorption; Charge coupled devices; Conductivity; Dark current; Degradation; Laboratories; Observatories; Signal to noise ratio; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.806476
