Title :
Dispersion-compensated 333-km 10-Gb/s transmission using mid-span spectral inversion in an injection-locked InGaAsP V-groove laser
Author :
Iannone, P.P. ; Gnauck, A.H. ; Prucnal, P.R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
We have demonstrated a 1.5-μm, 333-km, 10-Gb/s transmission system in conventional 1.3-μm zero-dispersion-wavelength single-mode fiber, using mid-span spectral inversion In a multi-mode semiconductor laser. The inverted spectrum was generated via cavity-enhanced highly-nondegenerate four-wave mixing, for which the resonant gain in the injection-locked V-groove laser yields higher conversion efficiencies relative to those of travelling-wave amplifiers. The bit-rate×distance product of 3330 Gb-km/s is more than an order of magnitude better than the best previous result employing a semiconductor conjugator.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; multiwave mixing; optical communication equipment; optical dispersion; optical fibres; optical phase conjugation; semiconductor lasers; 1.3 mum; 1.5 mum; 10 Gbit/s; 333 km; InGaAsP; bit-rate; cavity-enhanced highly-nondegenerate four-wave mixing; conventional zero-dispersion-wavelength single-mode fiber; conversion efficiencies; dispersion-compensated transmission; distance; in an injection-locked InGaAsP V-groove laser; injection-locked InGaAsP V-groove laser; multi-mode semiconductor laser; resonant gain; semiconductor conjugator; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Fiber lasers; Laser excitation; Laser mode locking; Laser modes; Optical fiber dispersion; Optical fiber polarization; Pump lasers; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
