Dispersion-compensated 333-km 10-Gb/s transmission using mid-span spectral inversion in an injection-locked InGaAsP V-groove laser

Author

Iannone, P.P. ; Gnauck, A.H. ; Prucnal, P.R.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

6

Issue

8

fYear

1994

Firstpage

1046

Lastpage

1049

Abstract

We have demonstrated a 1.5-μm, 333-km, 10-Gb/s transmission system in conventional 1.3-μm zero-dispersion-wavelength single-mode fiber, using mid-span spectral inversion In a multi-mode semiconductor laser. The inverted spectrum was generated via cavity-enhanced highly-nondegenerate four-wave mixing, for which the resonant gain in the injection-locked V-groove laser yields higher conversion efficiencies relative to those of travelling-wave amplifiers. The bit-rate×distance product of 3330 Gb-km/s is more than an order of magnitude better than the best previous result employing a semiconductor conjugator.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; multiwave mixing; optical communication equipment; optical dispersion; optical fibres; optical phase conjugation; semiconductor lasers; 1.3 mum; 1.5 mum; 10 Gbit/s; 333 km; InGaAsP; bit-rate; cavity-enhanced highly-nondegenerate four-wave mixing; conventional zero-dispersion-wavelength single-mode fiber; conversion efficiencies; dispersion-compensated transmission; distance; in an injection-locked InGaAsP V-groove laser; injection-locked InGaAsP V-groove laser; multi-mode semiconductor laser; resonant gain; semiconductor conjugator; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Fiber lasers; Laser excitation; Laser mode locking; Laser modes; Optical fiber dispersion; Optical fiber polarization; Pump lasers; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.313089

Filename

313089