High-performance poly-Si TFTs made by Ni-mediated crystallization through low-shot laser annealing

Author

Soo Young Yoon ; Young, N. ; van der Zaag, P.J. ; McCulloch, D.

Author_Institution

Philips Res. Labs., Redhill, UK

Volume

24

Issue

1

fYear

2003

Firstpage

22

Lastpage

24

Abstract

High-performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been fabricated using metal-induced crystallization followed by laser annealing (L-MIC). Laser annealing after MIC was found to yield a major improvement to the electrical characteristics of poly-Si TFTs. At a laser fluence of 330 mJ/cm², the field effect mobility increased from 71 to 239 cm²/Vs, and the minimum leakage current reduced from around 3.0×10/sup -12/ A/μm to 2.9×10/sup -13/ A/μm at a drain voltage of 5 V. In addition, the dependence of the TFT characteristics on the laser energy density was much weaker than that for conventional excimer laser annealed poly-Si TFTs.

Keywords

carrier mobility; elemental semiconductors; laser beam annealing; leakage currents; nickel; recrystallisation annealing; silicon; thin film transistors; 5 V; 550 C; Ni-mediated crystallization; Si:Ni-SiO/sub 2/; TFT characteristics; drain voltage; electrical characteristics; field effect mobility; laser energy density; laser fluence; low-shot laser annealing; metal-induced crystallization; minimum leakage current; poly-Si TFTs; polycrystalline silicon thin-film transistors; Active matrix liquid crystal displays; Annealing; Crystalline materials; Crystallization; Impurities; Leakage current; Microwave integrated circuits; Nickel; Silicon; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.807019

Filename

1185198