Title :
Compensated back-channel TFTs in hydrogenated amorphous silicon
Author :
Shannon, J.M. ; Gerstner, E.G.
Author_Institution :
Sch. of Electron., Univ. of Surrey, UK
Abstract :
Compensated back-channel inverted staggered TFTs have been made in a-Si:H. Donor impurities were implanted to form a good source and drain ohmic contact followed by an acceptor implant to compensate the channel region. TFTs have been made with no degradation of channel mobility due to the implants and a leakage current between source and drain comparable with the best TFTs made using conventional etched back-channel technology.
Keywords :
amorphous semiconductors; carrier mobility; compensation; elemental semiconductors; hydrogen; ion implantation; leakage currents; ohmic contacts; semiconductor device measurement; silicon; thin film transistors; Si:H; a-Si:H compensated back-channel inverted staggered TFTs; acceptor implant; channel mobility; channel region compensation; donor impurity implantation; drain ohmic contact; source ohmic contact; source-drain leakage current; Amorphous silicon; Annealing; Degradation; Etching; FETs; Implants; Impurities; Ion implantation; Ohmic contacts; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.807017
