Low RF noise and power loss for ion-implanted Si having an improved implantation process

Author

Chan, K.T. ; Chin, Albert ; McAlister, S.P. ; Chang, C.Y. ; Liu, J. ; Chien, S.C. ; Duh, D.S. ; Lin, W.J.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

24

Issue

1

fYear

2003

Firstpage

28

Lastpage

30

Abstract

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.

Keywords

MMIC; S-parameters; elemental semiconductors; equivalent circuits; high-frequency transmission lines; hydrogen; ion implantation; losses; semiconductor device models; semiconductor device noise; silicon; 0.25 dB; 0.6 dB; 110 GHz; 18 GHz; 4 MeV; MMICs; RF integrity; RF noise; S-parameters; Si:H; Si:H transmission lines; VLSI technology; equivalent circuit model; high isolation impedance to ground; implantation energy; ion implantation process; power loss; process integration; proton implantation; very-low-transmission line noise; Circuit noise; Distributed parameter circuits; Loss measurement; Measurement standards; Noise measurement; Power measurement; Power transmission lines; Propagation losses; Radio frequency; Transmission line measurements;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.807027

Filename

1185200