Title :
Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate
Author :
Lee, Jeong-Soo ; Ha, Daewon ; Choi, Yang-Kyu ; King, Tsu-Jae ; Bokor, Jeffrey
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas, Richardson, TX, USA
Abstract :
We report the low-frequency noise characteristics of ultrathin body (UTB) p-channel MOSFETs with molybdenum (Mo) as the gate material. Using the number fluctuation model with correlated mobility fluctuation, the dependence of the noise behavior on bias condition is explained. The impact of nitrogen implantation (for gate work function engineering) on the noise behavior is also presented. An exponential increase in noise with nitrogen implant dose is attributed to interface-trap generation caused by nitrogen penetration through the gate oxide.
Keywords :
MOSFET; interface states; ion implantation; molybdenum; semiconductor device models; semiconductor device noise; silicon-on-insulator; Mo gate; Mo-SiO/sub 2/-Si; bias condition; correlated mobility fluctuation; gate work function engineering; interface-trap generation; low-frequency noise characteristics; nitrogen implantation; nitrogen penetration; number fluctuation model; ultrathin body SOI MOSFETs; ultrathin body p-channel MOSFETs; Annealing; CMOS technology; Fabrication; Fluctuations; Implants; Low-frequency noise; MOSFET circuits; Nitrogen; Semiconductor device noise; Silicon on insulator technology;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.807025
