High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues

Author

Deen, M. Jamal ; Chen, Chih-Hung ; Asgaran, Saman ; Rezvani, G. Ali ; Tao, Jon ; Kiyota, Yukihiro

Author_Institution

Dept. of Electron. & Commun. Eng., McMaster Univ., Hamilton, Ont.

Volume

53

Issue

9

fYear

2006

Firstpage

2062

Lastpage

2081

Abstract

Compact modeling of the most important high-frequency (HF) noise sources of the MOSFET is presented in this paper, along with challenges in noise measurement and deembedding of future CMOS technologies. Several channel thermal noise models are reviewed and their ability to predict the channel noise of extremely small devices is discussed. The impact of technology scaling on noise performance of MOSFETs is also investigated by means of analytical expressions. It is shown that the gate tunneling current has a significant impact on MOSFETs noise parameters, especially at lower frequencies. Limitations of some commonly used noise models in predicting the HF noise parameters of modern MOSFETs are addressed and methods to alleviate some of the limitations are discussed

Keywords

MOSFET; semiconductor device measurement; semiconductor device models; semiconductor device noise; thermal noise; CMOS technologies; HF noise parameters; HF noise sources; MOSFET noise; compact modeling; gate tunneling current; high-frequency noise; noise measurement; thermal noise models; CMOS technology; Circuit noise; Hafnium; MOSFETs; Noise figure; Noise measurement; Radio frequency; Scattering parameters; Semiconductor device modeling; Semiconductor device noise; Compact noise modeling; HF noise; HF noise measurement; MOS Noise; Noise modeling; Noise parameters; RF CMOS noise; RF MOS transistor noise; RF Noise; RF compact MOS noise models; RF noise deembedding; RF noise measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.880370

Filename

1677840