Title :
Validation of MOSFET model Source–Drain Symmetry
Author :
McAndrew, Colin C.
Author_Institution :
Freescale Semicond., Tempe, AZ
Abstract :
This paper presents dc and ac tests that verify whether a MOSFET model is symmetric with respect to a source-drain reversal. The tests are valid in the presence of and also verify the symmetry of gate and bulk currents, and evaluate the symmetry of all components of MOSFET charge models
Keywords :
MOSFET; semiconductor device models; MOSFET model; ac tests; bulk current; dc test; gate current; source drain symmetry; Analog circuits; Capacitance; Circuit simulation; Digital circuits; Intrusion detection; MOSFET circuits; SPICE; Semiconductor device modeling; Switches; Testing; MOSFETs; Modeling; SPICE;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.881005
