• DocumentCode
    1159946
  • Title

    Validation of MOSFET model Source–Drain Symmetry

  • Author

    McAndrew, Colin C.

  • Author_Institution
    Freescale Semicond., Tempe, AZ
  • Volume
    53
  • Issue
    9
  • fYear
    2006
  • Firstpage
    2202
  • Lastpage
    2206
  • Abstract
    This paper presents dc and ac tests that verify whether a MOSFET model is symmetric with respect to a source-drain reversal. The tests are valid in the presence of and also verify the symmetry of gate and bulk currents, and evaluate the symmetry of all components of MOSFET charge models
  • Keywords
    MOSFET; semiconductor device models; MOSFET model; ac tests; bulk current; dc test; gate current; source drain symmetry; Analog circuits; Capacitance; Circuit simulation; Digital circuits; Intrusion detection; MOSFET circuits; SPICE; Semiconductor device modeling; Switches; Testing; MOSFETs; Modeling; SPICE;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2006.881005
  • Filename
    1677854
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1159946