• DocumentCode
    1159971
  • Title

    I – V Characterization of Tunnel Diodes and Multijunction Solar Cells

  • Author

    Guter, Wolfgang ; Bett, Andreas W.

  • Author_Institution
    Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg
  • Volume
    53
  • Issue
    9
  • fYear
    2006
  • Firstpage
    2216
  • Lastpage
    2222
  • Abstract
    This paper discusses common difficulties in measuring tunnel diodes and sets a special focus on devices consisting of tunnel diodes and solar cells, such as multijunction solar cells. The resulting theoretical current-voltage (I-V) characteristics of tunnel diodes and solar cells when measured via four-wire techniques are calculated and compared with experimentally measured I-V curves. Solutions to overcome the measurement difficulties are provided, and a method to infer the maximum tunneling current density of tunnel diodes in a device with solar cells is discussed. This paper also describes how the elsewhere-observed ostensible hysteresis with multijunction solar cells is caused by the measurement setup or by large internal series resistances
  • Keywords
    electric current measurement; semiconductor device measurement; solar cells; tunnel diodes; voltage measurement; I-V curves; current-voltage characteristics; four-wire techniques; internal series resistances; multijunction solar cells; ostensible hysteresis; tunnel diodes; Current density; Current measurement; Density measurement; Electrical resistance measurement; Epitaxial growth; Epitaxial layers; Photovoltaic cells; Semiconductor diodes; Testing; Voltage; Current–voltage (; multijunction solar cell; tunnel diode;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2006.881051
  • Filename
    1677856