مرکز منطقه ای اطلاع رساني علوم و فناوري - SiGe HBT Without Selectively Implanted Collector (SIC) Exhibiting <img src="/images/tex/360.gif" alt="\\max = \\hbox {310 }\\hbox {GHz}"> and <img src="/images/tex/361.gif" alt="\\hbox {BV}

DocumentCode :

1160230

Title :

SiGe HBT Without Selectively Implanted Collector (SIC) Exhibiting $\\max = \\hbox {310 }\\hbox {GHz}$ and $\\hbox {BV}_{\\rm CEO = }\\hbox {2 }\\hbox {V}$

Author :

Rieh, Jae-Sung ; Khater, Marwan ; Freeman, Greg ; Ahlgren, David

Author_Institution :

Sch. of Electr. Eng., Korea Univ., Seoul

Volume :

Issue :

fYear :

2006

Firstpage :

2407

Lastpage :

2409

Abstract :

Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak f_max of 310 GHz at the collector-current density of 7 mA/mum² and BV_CEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed

Keywords :

Ge-Si alloys; electric breakdown; heterojunction bipolar transistors; 2 V; 310 GHz; HBT; SIC doses; SiGe; breakdown voltage; heterojunction bipolar transistors; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Millimeter wave technology; Millimeter wave transistors; Silicon carbide; Silicon germanium; Space technology; Voltage; Breakdown voltage (BV); heterojunction bipolar transistors (HBTs);

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/TED.2006.879679

Filename :

1677882

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1160230