Title :
High-Frequency Switching of SiC High-Voltage LJFET
Author :
Sheng, Kuang ; Zhang, Yongxi ; Yu, Liangchun ; Su, Ming ; Zhao, Jian H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ
Abstract :
In this paper, inductive-load switching of a high-voltage lateral JFET (HV-LJFET) on 4H-SiC is investigated with a monolithically integrated driver and with an external driver for high-frequency, high-temperature applications. A new ldquocapacitor-coupledrdquo gate driver circuitry is proposed and optimized to utilize a standard MOS driver and enable fast switching speed without the need for a negative power supply. Switching times and losses of the silicon carbide (SiC) HV-LJFET are characterized under various driver conditions and device temperatures. The results reveal that the temperature-independent, high switching speed of the SiC LJFET makes it possible to hard-switch at 3 MHz, 200 V, 1.2 A, and 250degC with good efficiency, significantly higher than silicon devices with similar voltage ratings.
Keywords :
field effect transistor switches; high-speed integrated circuits; power field effect transistors; silicon compounds; wide band gap semiconductors; SiC; capacitor-coupled gate driver circuitry; current 1.2 A; fast switching speed; frequency 3 MHz; high-frequency applications; high-frequency switching; high-temperature applications; high-voltage silicon carbide LJFET; inductive-load switching; monolithically integrated driver; silicon devices; standard MOS driver; temperature 250 degC; voltage 200 V; Annealing; Doping; Driver circuits; Frequency; Ohmic contacts; Power integrated circuits; Power supplies; Silicon carbide; Switching circuits; Voltage; High frequency; JFET; power ICs; silicon carbide (SiC);
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2008.2005984
